inchange semiconductor product specification silicon pnp power transistors 2SB1381 description ? with to-220f package ? complement to type 2sd2079 ? low collector saturation voltage ?high dc current gain applications ? high power switching applications ? hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a i cm collector current-peak -8 a i b base current -0.5 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1381 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-2.5a; i b =-5ma -1.5 v v cesat-2 collector-emitter saturation voltage i c =-5a; i b =-20ma -3.0 v v besat base-emitter saturation voltage i c =-2.5a; i b =-5ma -2.5 v i cbo collector cut-off current v cb =-100v; i e =0 -100 | a i ebo emitter cut-off current v eb =-6v; i c =0 -2.5 ma h fe-1 dc current gain i c =-2.5a ; v ce =-3v 1500 15000 h fe-2 dc current gain i c =-7a ; v ce =-3v 500 switching times t on turn-on time 0.8 | s t s storage time 2.5 | s t f fall time i b1 =-i b2 =-5ma v cc =-25v ,r l =10 |? 2.0 | s
inchange semiconductor product specification 3 silicon pnp power transistors 2SB1381 package outline fig.2 outline dimensions
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